[1] Chen, L. et al. Abnormal radiative interband transitions in high-Al-content AlGaN quantum wells induced by polarized orbitals. ACS Photonics 4, 2197–2202 (2017). doi: 10.1021/acsphotonics.7b00324
[2] Harrison, W. A. Elementary Electronic Structure. (World Scientific, Singapore, 2004).
[3] Limpijumnong, S. & Lambrecht, W. R. L. Theoretical study of the relative stability of wurtzite and rocksalt phases in MgO and GaN. Phys. Rev. B 63, 104103 (2001). doi: 10.1103/PhysRevB.63.104103
[4] Cao, Y. W. et al. Engineered Mott ground state in a LaTiO3+δ/LaNiO3 heterostructure. Nat. Commun. 7, 10418 (2016). doi: 10.1038/ncomms10418
[5] Disa, A. S. et al. Orbital engineering in symmetry-breaking polar heterostructures. Phys. Rev. Lett. 114, 026801 (2015). doi: 10.1103/PhysRevLett.114.026801
[6] Cao, Y. et al. Unconventional superconductivity in magic-angle graphene superlattices. Nature 556, 43–50 (2018). doi: 10.1038/nature26160
[7] Cao, Y. et al. Correlated insulator behaviour at half-filling in magic-angle graphene superlattices. Nature 556, 80–84 (2018). doi: 10.1038/nature26154
[8] Kresse, G. & Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15–50 (1996). doi: 10.1016/0927-0256(96)00008-0
[9] Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996). doi: 10.1103/PhysRevB.54.11169
[10] Perdew, J. P. & Yue, W. Accurate and simple density functional for the electronic exchange energy: generalized gradient approximation. Phys. Rev. B 33, 8800–8802 (1986). doi: 10.1103/PhysRevB.33.8800
[11] Perdew, J. P. et al. Atoms, molecules, solids, and surfaces: applications of the generalized gradient approximation for exchange and correlation. Phys. Rev. B 46, 6671–6687 (1992). doi: 10.1103/PhysRevB.46.6671
[12] Monkhorst, H. J. & Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188–5192 (1976). doi: 10.1103/PhysRevB.13.5188
[13] Yang, W. H. et al. High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability. Sci. Rep. 4, 5166 (2014). doi: 10.1038/srep05166
[14] Zhuang, Q. et al. Defect suppression in AlN epilayer using hierarchical growth units. J. Phys. Chem. C. 117, 14158–14164 (2013). doi: 10.1021/jp401745v
[15] Gao, N. et al. Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection. Nanoscale 6, 14733–14739 (2014). doi: 10.1039/C4NR04286G