[1] Billinghurst, M. & Starner, T. Wearable devices: new ways to manage information. Computer 32, 57-64 (1999). doi: 10.1109/2.738305
[2] Wu, H. F. et al. Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers. Light: Science & Applications 13, 284 (2024).
[3] Xiong, J. H. et al. Augmented reality and virtual reality displays: emerging technologies and future perspectives. Light: Science & Applications 10, 216 (2021).
[4] Lee, T. Y. et al. Technology and applications of micro-LEDs: their characteristics, fabrication, advancement, and challenges. ACS Photonics 9, 2905-2930 (2022). doi: 10.1021/acsphotonics.2c00285
[5] Jiang, H. X. & Lin, J. Y. Nitride micro-LEDs and beyond - a decade progress review. Optics Express 21, A475-A484 (2013). doi: 10.1364/OE.21.00A475
[6] Chen, Z., Yan, S. K. & Danesh, C. MicroLED technologies and applications: characteristics, fabrication, progress, and challenges. Journal of Physics D: Applied Physics 54, 123001 (2021). doi: 10.1088/1361-6463/abcfe4
[7] Charissis, V. & Papanastasiou, S. Human-machine collaboration through vehicle head up display interface. Cognition, Technology & Work 12, 41-50 (2010).
[8] Zhan, T. et al. Augmented reality and virtual reality displays: perspectives and challenges. iScience 23, 101397 (2020). doi: 10.1016/j.isci.2020.101397
[9] Lin, J. Y. & Jiang, H. X. Development of microLED. Applied Physics Letters 116, 100502 (2020). doi: 10.1063/1.5145201
[10] Chen, H. W., Tan, G. J. & Wu, S. T. Ambient contrast ratio of LCDs and OLED displays. Optics Express 25, 33643-33656 (2017). doi: 10.1364/OE.25.033643
[11] Kajiyama, Y., Kajiyama, K. & Aziz, H. Maskless RGB color patterning of vacuum-deposited small molecule OLED displays by diffusion of luminescent dopant molecules. Optics Express 23, 16650-16661 (2015). doi: 10.1364/OE.23.016650
[12] Lee, C. C. et al. Development of robust flexible OLED encapsulations using simulated estimations and experimental validations. Journal of Physics D: Applied Physics 45, 275102 (2012). doi: 10.1088/0022-3727/45/27/275102
[13] Park, M. H. et al. Flexible lamination encapsulation. Advanced Materials 27, 4308-4314 (2015). doi: 10.1002/adma.201501856
[14] Spindler, J. P. et al. System considerations for RGBW OLED displays. Journal of the Society for Information Display 14, 37-48 (2006). doi: 10.1889/1.2166833
[15] Tian, P. F. et al. Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5 kA cm−2. Semiconductor Science and Technology 31, 045005 (2016).
[16] Ding, K. et al. Micro-LEDs, a manufacturability perspective. Applied Sciences 9, 1206 (2019). doi: 10.3390/app9061206
[17] Qi, L. H. et al. Monolithic active-matrix full-color micro-LED micro-display using InGaN/AlGaInP heterogeneous integration. Light: Science and Applications 12, 258 (2023). doi: 10.1038/s41377-023-01298-w
[18] Huang, Y. G. et al. Prospects and challenges of mini-LED and micro-LED displays. Journal of the Society for Information Display 27, 387-401 (2019). doi: 10.1002/jsid.760
[19] Wu, T. Z. et al. Mini-LED and micro-LED: promising candidates for the next generation display technology. Applied Sciences 8, 1557 (2018). doi: 10.3390/app8091557
[20] Anwar, A. R. et al. Recent progress in micro-LED-based display technologies. Laser & Photonics Reviews 16, 2100427 (2022). doi: 10.1002/lpor.202100427
[21] Iida, D. & Ohkawa, K. Recent progress in red light-emitting diodes by III-nitride materials. Semiconductor Science and Technology 37, 013001 (2022). doi: 10.1088/1361-6641/ac3962
[22] Zhang, K. et al. Investigation of electrical properties and reliability of GaN-based micro-LEDs. Nanomaterials 10, 689 (2020). doi: 10.3390/nano10040689
[23] Yang, T. X. et al. 2822 PPI active matrix micro-LED display fabricated via Au-Au micro-bump bonding technology. Displays 87, 102997 (2025).
[24] Ji, X. X. et al. 3400 PPI active-matrix monolithic blue and green micro-LED display. IEEE Transactions on Electron Devices 70, 4689-4693 (2023).
[25] Qi, L. H. et al. 848 PPI high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production. Optics Express 29, 10580-10591 (2021).
[26] Zhang, X. F. , Bai, W. W. & Qu, S. High resolution 1024×768 micro-LED display using flip-chip bonding. Proceedings of 2024 25th International Conference on Electronic Packaging Technology (ICEPT). Tianjin, China: IEEE, 2024, 01-03.
[27] Li, Y. et al. 3175 PPI active-matrix micro-LED device array towards full high-definition light engine. Materials Science in Semiconductor Processing 188, 109178 (2025).
[28] Chen, C. J. et al. Fabrication and characterization of active-matrix 960×540 blue GaN-based micro-LED display. IEEE Journal of Quantum Electronics 55, 300106 (2019). doi: 10.1109/jqe.2019.2900540
[29] Huang, W. J. , Lin, Y. H. & Liu, Z. J. P-8.2: fabrication of ultrahigh-resolution micro-LED display by flip-chip bonding. SID Symposium Digest of Technical Papers 53, 877-878 (2022).
[30] Wu, M. C., Hsu, Z. L. & Wu, C. Y. High-pixel-density 960 × 540 flip-chip AlGaInP red microLED display. IEEE Transactions on Electron Devices 69, 6206-6211 (2022). doi: 10.1109/TED.2022.3209134
[31] Yang, T. X. et al. Fabrication and reflow of indium bumps for active-matrix micro-LED display of 3175 PPI. Displays 86, 102897 (2025). doi: 10.1016/j.displa.2024.102897
[32] Pandey, A., Reddeppa, M. & Mi, Z. T. Recent progress on micro-LEDs. Light: Advanced Manufacturing 4, 519-542 (2023).
[33] Yu, Z. X. et al. Flexible active-matrix micro-LED display utilizing InSnO TFTs with high mobility of 39.1 cm2V−1s−1 and mass-production compatible process. Proceedings of 2024 IEEE International Electron Devices Meeting (IEDM). Francisco, CA, USA: IEEE, 2024, 1-4.
[34] Wu, M. C. , Chung, M. C. & Wu, C. Y. 3200 PPI matrix-addressable blue microLED display. Micromachines 13, 1350 (2022).
[35] Zhao, Y. Z. et al. 6773 PPI GaN-based blue micro-LED displays fabricated by monolithic integration technology. IEEE Electron Device Letters 46, 1561-1564 (2025).
[36] Li, C. X. et al. Investigation of InGaN-based flexible RGB micro-light-emitting diodes and their monolithic integration. Applied Physics Letters 125, 242112 (2024). doi: 10.1063/5.0237742
[37] Olivier, F. et al. Influence of size-reduction on the performances of GaN-based micro-LEDs for display application. Journal of Luminescence 191, 112-116 (2017). doi: 10.1016/j.jlumin.2016.09.052
[38] Verzellesi, G. et al. Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies. Journal of Applied Physics 114, 071101 (2013). doi: 10.1063/1.4816434
[39] Xu, F. F. et al. Wafer-scale monolithic integration of blue micro-light-emitting diodes and green/red quantum dots for full-color displays. IEEE Electron Device Letters 44, 1320-1323 (2023). doi: 10.1109/LED.2023.3285657
[40] De, S. et al. Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes. Applied Physics Letters 101, 121919 (2012). doi: 10.1063/1.4754079
[41] Takeuchi, T. et al. Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells. Japanese Journal of Applied Physics 36, L382-L385 (1997). doi: 10.1143/JJAP.36.L382
[42] Pan, S. et al. Investigation of the electroluminescence mechanism of GaN-based blue and green light-emitting diodes with junction temperature range of 120-373 K. Applied Sciences 10, 444 (2020). doi: 10.3390/app10020444
[43] Zhuang, Z., Lida, D. & Ohkawa, K. Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes. Applied Physics Letters 116, 173501 (2020). doi: 10.1063/5.0006910
[44] Liu, Z. Y. et al. A review on micro-LED display integrating metasurface structures. Micromachines 14, 1354 (2023). doi: 10.3390/mi14071354
[45] Lin, J. G. et al. Enhancing the light extraction efficiency in micro‐organic light‐emitting diodes with metalens. Advanced Photonics Research 2, 2000145 (2021). doi: 10.1002/adpr.202000145
[46] Rong, W. C. , Luo, B. Q. & Liu, Z. J. P-12.4: investigation of micro-lens to improve the efficiency of micro-led display system. SID Symposium Digest of Technical Papers 52, 605-608 (2021).
[47] Tsuchiya, H. et al. 0.26-inch LED microdisplay using pixel level Cu–Cu connections of transferred GaN/Si and CMOS backplane wafer. Journal of the Society for Information Display 33, 425-432 (2025).
[48] Zhou, H. J. et al. High resolution micro-LED arrays using Au–Sn flip-chip bonding. IEEE Transactions on Electron Devices 70, 3140-3144 (2023). doi: 10.1109/TED.2023.3268628
[49] Yang, Z. et al. Research on Au-In flip-chip bonding process of 2300 PPI micro-LED arrays. IEEE Transactions on Electron Devices 71, 7637-7643 (2024). doi: 10.1109/TED.2024.3470769