[1] |
Nakamura S, Mukai T, Senoh M. High-power GaN P-N junction blue-light-emitting Diodes. Jpn J Appl Phys 1991; 30: L1998–L2001. doi: 10.1143/JJAP.30.L1998 |
[2] |
Nakamura S, Senoh M, Mukai T. High-power InGaN/GaN double-heterostructure violet light emitting diodes. Appl Phys Lett 1993; 62: 2390–2392. doi: 10.1063/1.109374 |
[3] |
Amano H, Kito M, Hiramatsu K, Akasaki I. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Jpn J Appl Phys 1989; 28: L2112–L2114. doi: 10.1143/JJAP.28.L2112 |
[4] |
Guo X, Schubert EF. Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates. Appl Phys Lett 2001; 78: 3337–3339. doi: 10.1063/1.1372359 |
[5] |
Iveland J, Martinelli L, Peretti J, Speck JS, Weisbuch C. Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. Phys Rev Lett 2013; 110: 177406. doi: 10.1103/PhysRevLett.110.177406 |
[6] |
Molnar RJ, Götz W, Romano LT, Johnson NM. Growth of gallium nitride by hydride vapor-phase epitaxy. J Crystal Growth 1997; 178: 147–156. doi: 10.1016/S0022-0248(97)00075-4 |
[7] |
Storm DF, Deen DA, Katzer DS, Meyer DJ, Binari SC et al. Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates. J Crystal Growth 2013; 380: 14–17. doi: 10.1016/j.jcrysgro.2013.05.029 |
[8] |
Storm DF, Growden TA, Katzer DS, Hardy MT, Zhang WD et al. AlN/GaN/AlN resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy on freestanding GaN. J Vac Sci Technol B 2017; 35: 02B110. doi: 10.1116/1.4977779 |
[9] |
Growden TA, Storm DF, Zhang WD, Brown ER, Meyer DJ et al. Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy. Appl Phys Lett 2016; 109: 083504. doi: 10.1063/1.4961442 |
[10] |
Silvaco ATLAS [software]. www.silvaco.com. 2016. |
[11] |
Einspruch N, Frensley W. Heterostructures and Quantum Devices. Orlando: Academic Press; 1994. |
[12] |
Kane EO. Zener tunneling in semiconductors. J Phys Chem Solids 1960; 12: 181–188. doi: 10.1016/0022-3697(60)90035-4 |
[13] |
Sze SM. Physics of Semiconductor Devices, 2nd ed.New York: John Wiley & Sons; 1981. |
[14] |
Berland K. A general solution to the Schrödinger-Poisson equation for a charged hard wall: application to potential profile of an AlN/GaN barrier structure. Superlatt Microstruct 2011; 50: 411–418. doi: 10.1016/j.spmi.2011.08.003 |
[15] |
Madelung O. Semiconductor: Group Ⅳ Elements and Ⅲ-Ⅴ Compound. Berlin: Springer-Verlag; 1991. |
[16] |
Coldren LA, Corzine SW. Diode Lasers and Photonic Integrated Circuits. Hoboken: Wiley; 1995. |
[17] |
DenBaars SP, Feezell D, Kelchner K, Pimputkar S, Pan CC et al. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays. Acta Mater 2013; 61: 945–951. doi: 10.1016/j.actamat.2012.10.042 |
[18] |
Zimmler MA, Bao JM, Shalish I, Yi W, Narayanamurti V et al. A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection. Nanotechnol 2007; 18: 395201. doi: 10.1088/0957-4484/18/39/395201 |
[19] |
Bernardini F, Fiorentini V, Vanderbilt D. Spontaneous polarization and piezoelectric constants of Ⅲ-Ⅴ nitrides. Phys Rev B 1997; 56: R10024–R10027. doi: 10.1103/PhysRevB.56.R10024 |
[20] |
Ambacher O, Foutz B, Smart J, Shealy JR, Weimann NG et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J Appl Phys 2000; 87: 334–344. doi: 10.1063/1.371866 |
[21] |
Ibbetson JP, Fini PT, Ness KD, DenBaars SP, Speck JS et al. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors. Appl Phys Lett 2000; 77: 250–252. doi: 10.1063/1.126940 |
[22] |
Bykhovski A, Gelmont B, Shur M. The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure. J Appl Phys 1993; 74: 6734–6739. doi: 10.1063/1.355070 |
[23] |
Yu ET, Dang XZ, Asbeck PM, Lau SS, Sullivan GJ. Spontaneous and piezoelectric polarization effects in Ⅲ-Ⅴ nitride heterostructures. J Vac Sci Technol B 1999; 17: 1742–1749. doi: 10.1116/1.590818 |
[24] |
Fiorentini V, Bernnardini F, Ambacher O. Evidence for nonlinear macroscopic polarization in Ⅲ-Ⅴ nitride alloy heterostructures. Appl Phys Lett 2012; 80: 1204–1206. doi: 10.1063/1.1448668 |
[25] |
Caro MA, Schulz S, Healy SB, O'Reilly EP. Built-in field control in alloyed c-plane Ⅲ-N quantum dots and wells. J Appl Phys 2011; 109: 084110. doi: 10.1063/1.3563568 |
[26] |
Carvalho D, Müller-Caspary K, Schowalter M, Grieb T, Mehrtens T et al. Direct measurement of polarization-induced fields in GaN/AlN by nano-beam electron diffraction. Sci Rep 2016; 6: 28459. doi: 10.1038/srep28459 |
[27] |
Martin G, Botchkarev A, Rockett A, Morkoc H. Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy. Appl Phys Lett 1996; 68: 2541–2543. doi: 10.1063/1.116177 |
[28] |
Jeon SR, Song YH, Jang HJ, Yang GM, Hwang SW et al. Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions. Appl Phys Lett 2001; 78: 3265–3267. doi: 10.1063/1.1374483 |
[29] |
Takeuchi T, Hasnain G, Corzine S, Hueschen M, Schneider RP Jr et al. GaN-based light emitting diodes with tunnel junctions. Jpn J Appl Phys 2001; 40: L861–L863. doi: 10.1143/JJAP.40.L861 |
[30] |
Grundmann MJ, Mishra UK. Multi-color light emitting diode using polarization-induced tunnel junctions. Phys Status Solidi 2007; 4: 2830–2833. doi: 10.1002/pssc.200675000 |
[31] |
Simon J, Zhang Z, Goodman K, Xing HL, Kosel T et al. Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures. Phys Rev Lett 2009; 103: 026801. doi: 10.1103/PhysRevLett.103.026801 |
[32] |
Schubert MF. Interband tunnel junctions for wurtzite Ⅲ-nitride semiconductors based on heterointerface polarization charges. Phys Rev B 2010; 81: 035303. doi: 10.1103/PhysRevB.81.035303 |
[33] |
Fujii T, Gao Y, Sharma R, Hu EL, DenBaars SP et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Appl Phys Lett 2004; 84: 855–857. doi: 10.1063/1.1645992 |
[34] |
Li XH, Song RB, Ee YK, Kumnorkaew P, Gilchrist JF et al. Light extraction efficiency and radiation patterns of Ⅲ-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios. IEEE Photonics J 2011; 3: 489–499. doi: 10.1109/JPHOT.2011.2150745 |