[1] Chen, Z., Yan, S. K. & Danesh, C. MicroLED technologies and applications: characteristics, fabrication, progress, and challenges. Journal of Physics D: Applied Physics 54, 123001 (2021). doi: 10.1088/1361-6463/abcfe4
[2] Wu, Y. P. et al. InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering. Light: Science & Applications 11, 294 (2022).
[3] Wang, L. et al. Green InGaN quantum dots breaking through efficiency and bandwidth bottlenecks of micro-LEDs. Laser & Photonics Reviews 15, 2000406 (2021). doi: 10.1002/lpor.202000406
[4] Wang, L. et al. InGaN quantum dots for micro-LEDs. APL Photonics 9, 100904 (2024). doi: 10.1063/5.0226660
[5] Park, S. H., Ahn, D. & Kim, J. W. Optical gain in InGaN/InGaAlN quantum well structures with zero internal field. Applied Physics Letters 92, 171115 (2008). doi: 10.1063/1.2920187
[6] Zhao, J. K. et al. Weak polarization electric field Ⅲ-N LEDs on polar plane with enhanced efficiency and strong lateral carrier confinement. Light: Science & Applications 15, 300 (2026).
[7] Li, C. et al. Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells. Materials & Design 190, 108565 (2020). doi: 10.1016/j.matdes.2020.108565
[8] Liu, Z. Y. et al. Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect. Light: Science & Applications 14, 64 (2025).
[9] Olivier, F. et al. Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: a size effect study. Applied Physics Letters 111, 022104 (2017). doi: 10.1063/1.4993741
[10] Zhang, L. D. et al. Demonstration of weak polarization electric field III-N LEDs based on polar plane. Laser & Photonics Reviews 17, 2300400 (2023). doi: 10.1002/lpor.202300400