[1]
|
Asghari, M. & Krishnamoorthy, A. V. Silicon photonics: energy-efficient communication. Nat. Photon. 5, 268–270 (2011). doi: 10.1038/nphoton.2011.68 |
[2]
|
Thomson, D. et al. Roadmap on silicon photonics. J. Opt. 18, 073003 (2016). doi: 10.1088/2040-8978/18/7/073003 |
[3]
|
Jones, R. et al. Heterogeneously integrated InP/silicon photonics: fabricating fully functional transceivers. IEEE Nanotechnol. Mag. 13, 17–26 (2019). |
[4]
|
Liang, D. et al. Fully-integrated heterogeneous DML transmitters for high-performance computing. J. Lightwave Technol. 38, 3322–3337 (2020). doi: 10.1109/JLT.2019.2959048 |
[5]
|
Elshaari, A. W. et al. Hybrid integrated quantum photonic circuits. Nat. Photon. 14, 285–298 (2020). doi: 10.1038/s41566-020-0609-x |
[6]
|
Atabaki, A. H. et al. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip. Nature 556, 349–354 (2018). doi: 10.1038/s41586-018-0028-z |
[7]
|
Sun, C. et al. Single-chip microprocessor that communicates directly using light. Nature 528, 534–538 (2015). doi: 10.1038/nature16454 |
[8]
|
Bowers, J. E. & Liu, A. Y. A comparison of four approaches to photonic integration. Optical Fiber Communications Conference and Exhibition. p. 1–3 (IEEE, 2017). |
[9]
|
Liu, A. Y. & Bowers, J. E. Photonic integration with epitaxial Ⅲ-Ⅴ on silicon. IEEE J. Sel. Top. Quant. Electron. 24, 6000412 (2018). |
[10]
|
Norman, J. C. et al. Perspective: the future of quantum dot photonic integrated circuits. APL Photon. 3, 030901 (2018). doi: 10.1063/1.5021345 |
[11]
|
Smit, M., Williams, K. & van der Tol, J. Past, present, and future of InP-based photonic integration. APL Photon. 4, 050901 (2019). doi: 10.1063/1.5087862 |
[12]
|
Komljenovic, T. et al. Heterogeneous silicon photonic integrated circuits. J. Lightwave Technol. 34, 20–35 (2016). doi: 10.1109/JLT.2015.2465382 |
[13]
|
Ramirez, J. M. et al. Ⅲ-Ⅴ-on-silicon integration: from hybrid devices to heterogeneous photonic integrated circuits. IEEE J. Sel. Top. Quant. Electron. 26, 6100213 (2020). doi: 10.1109/JSTQE.2019.2939503 |
[14]
|
Liang, D. & Bowers, J. E. Recent progress in lasers on silicon. Nat. Photon. 4, 511–517 (2010). doi: 10.1038/nphoton.2010.167 |
[15]
|
Wang, Z. C. et al. Novel light source integration approaches for silicon photonics. Laser Photon. Rev. 11, 1700063 (2017). doi: 10.1002/lpor.201700063 |
[16]
|
Li, Q. & Lau, K. M. Epitaxial growth of highly mismatched Ⅲ-Ⅴ materials on (001) silicon for electronics and optoelectronics. Prog. Cryst. Growth Charact. Mater. 63, 105–120 (2017). doi: 10.1016/j.pcrysgrow.2017.10.001 |
[17]
|
Chen, S. M. et al. Electrically pumped continuous-wave Ⅲ-Ⅴ quantum dot lasers on silicon. Nat. Photon. 10, 307–311 (2016). doi: 10.1038/nphoton.2016.21 |
[18]
|
Jung, D. et al. Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si. Appl. Phys. Lett. 112, 153507 (2018). doi: 10.1063/1.5026147 |
[19]
|
Xue, Y. et al. 1.55 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon. Opt. Express 28, 18172–18179 (2020). doi: 10.1364/OE.392120 |
[20]
|
Wang, Z. C. et al. Room-temperature InP distributed feedback laser array directly grown on silicon. Nat. Photon. 9, 837–842 (2015). doi: 10.1038/nphoton.2015.199 |
[21]
|
Han, Y. et al. Selectively grown Ⅲ-Ⅴ lasers for integrated Si-photonics. J. Lightwave Technol. 39, 940–948 (2021). doi: 10.1109/JLT.2020.3041348 |
[22]
|
Shi, Y. T. et al. Optical pumped InGaAs/GaAs nano-ridge laser epitaxially grown on a standard 300-mm Si wafer. Optica 4, 1468–1473 (2017). doi: 10.1364/OPTICA.4.001468 |
[23]
|
Han, Y. et al. Bufferless 1.5 µm Ⅲ-Ⅴ lasers grown on Si-photonics 220 nm silicon-on-insulator platforms. Optica 7, 148–153 (2020). doi: 10.1364/OPTICA.381745 |
[24]
|
Yan, Z., Han, Y. & Lau, K. M. Multi-heterojunction InAs/GaSb nano-ridges directly grown on (001) Si. Nanotechnology 31, 345707 (2020). doi: 10.1088/1361-6528/ab91f2 |
[25]
|
Schmid, H. et al. Template-assisted selective epitaxy of Ⅲ-Ⅴ nanoscale devices for co-planar heterogeneous integration with Si. Appl. Phys. Lett. 106, 233101 (2015). doi: 10.1063/1.4921962 |
[26]
|
Wirths, S. et al. Room-temperature lasing from monolithically integrated GaAs microdisks on silicon. ACS Nano 12, 2169–2175 (2018). doi: 10.1021/acsnano.7b07911 |
[27]
|
Mauthe, S. et al. High-speed Ⅲ-Ⅴ nanowire photodetector monolithically integrated on Si. Nat. Commun. 11, 4565 (2020). doi: 10.1038/s41467-020-18374-z |
[28]
|
Han, Y. & Lau, K. M. Ⅲ-Ⅴ lasers selectively grown on (001) silicon. J. Appl. Phys. 128, 200901 (2020). doi: 10.1063/5.0029804 |
[29]
|
Metaferia, W. et al. Growth of InP directly on Si by corrugated epitaxial lateral overgrowth. J. Phys. D Appl. Phys. 48, 045102 (2015). doi: 10.1088/0022-3727/48/4/045102 |
[30]
|
Parillaud, O. et al. High quality InP on Si by conformal growth. Appl. Phys. Lett. 68, 2654–2656 (1996). doi: 10.1063/1.116271 |
[31]
|
Han, Y., Xue, Y. & Lau, K. M. Selective lateral epitaxy of dislocation-free InP on silicon-on-insulator. Appl. Phys. Lett. 114, 192105 (2019). doi: 10.1063/1.5095457 |
[32]
|
Han, Y. et al. Micrometer-scale InP selectively grown on SOI for fully integrated Si-photonics. Appl. Phys. Lett. 117, 052102 (2020). doi: 10.1063/5.0015130 |
[33]
|
Kunert, B. et al. How to control defect formation in monolithic Ⅲ-Ⅴ hetero-epitaxy on (100) Si? A critical review on current approaches. Semicond. Sci. Technol. 33, 093002 (2018). doi: 10.1088/1361-6641/aad655 |
[34]
|
Paladugu, M. et al. Site selective integration of Ⅲ-Ⅴ materials on Si for nanoscale logic and photonic devices. Cryst. Growth Des. 12, 4696–4702 (2012). doi: 10.1021/cg300779v |
[35]
|
Jiang, S. et al. Evolution of (001) and (111) facets for selective epitaxial growth inside submicron trenches. J. Appl. Phys. 115, 023517 (2014). doi: 10.1063/1.4861416 |
[36]
|
Eaton, S. W. et al. Semiconductor nanowire lasers. Nat. Rev. Mater. 1, 16028 (2016). doi: 10.1038/natrevmats.2016.28 |
[37]
|
Fujii, T. et al. Multiwavelength membrane laser array using selective area growth on directly bonded InP on SiO2/Si. Optica 7, 838–846 (2020). doi: 10.1364/OPTICA.391700 |
[38]
|
Xue, Y. et al. Bufferless Ⅲ-Ⅴ photodetectors directly grown on (001) silicon-on-insulators. Opt. Lett. 45, 1754–1757 (2020). doi: 10.1364/OL.387702 |
[39]
|
Hu, Y. T. et al. Ⅲ-Ⅴ-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template. Light. Sci. Appl. 8, 93 (2019). doi: 10.1038/s41377-019-0202-6 |
[40]
|
Jiao, Y. Q. et al. InP membrane integrated photonics research. Semicond. Sci. Technol. 36, 013001 (2020). doi: 10.1088/1361-6641/abcadd |